BULK EXCITON POLARITONS IN GAAS MICROCAVITIES

Citation
Y. Chen et al., BULK EXCITON POLARITONS IN GAAS MICROCAVITIES, Physical review. B, Condensed matter, 52(3), 1995, pp. 1800-1805
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
3
Year of publication
1995
Pages
1800 - 1805
Database
ISI
SICI code
0163-1829(1995)52:3<1800:BEPIGM>2.0.ZU;2-V
Abstract
The optical properties of excitons in thin layers are significantly di fferent from those in bulk crystals. In particular, we study the case of a bulk material of thickness comparable with the wavelength of the excitonic transition confined on one or on both sides by appropriate B ragg reflectors. If-the cavity resonance quasimode is carefully tuned on the excitonic transition, strong exciton-photon coupling takes plac e and produces a Rabi-like splitting as large as that observed in quan tum-well-implanted microcavities and comparable optical absorption. In addition, the polaritonic spatial dispersion and the quantization of the exciton center-of-mass motion introduce remarkable fine structures which are absent in the quantum-well case. We demonstrate the above e ffects from a spectroscopic analysis of GaAs cavities and compare them with those displayed by quantum-well-implanted microcavities.