M. Ramsteiner et al., RAMAN-SCATTERING FROM VIBRATIONAL-MODES IN METALORGANIC MOLECULAR-BEAM EPITAXY-GROWN CARBON-DOPED INP - SPECTROSCOPIC SEARCH FOR THE CARBONDONOR, Applied physics letters, 67(5), 1995, pp. 647-649
Vibrational modes of carbon doped InP have been investigated by Raman
scattering and cluster-Bethe-lattice calculations. In contrast to othe
r carbon doped m-V semiconductors, the InP samples grown by metalorgan
ic molecular beam epitaxy (MOMBE) show n-type conductivity. Raman spec
tra from such samples reveal a vibrational mode at 220 cm(-1). The fre
quency of this mode lies in the gap between the acoustic and optical b
ranches of the phonon dispersion (gap mode). Cluster-Bethe-lattice cal
culations predict such a gap mode only for the carbon donor on the In
site and not for the carbon acceptor on the P site. (C) 1995 American
Institute of Physics.