RAMAN-SCATTERING FROM VIBRATIONAL-MODES IN METALORGANIC MOLECULAR-BEAM EPITAXY-GROWN CARBON-DOPED INP - SPECTROSCOPIC SEARCH FOR THE CARBONDONOR

Authors
RAMSTEINER M KLEINERT P PLOOG KH OH J KONAGAI M TAKAHASHI Y
Citation
M. Ramsteiner et al., RAMAN-SCATTERING FROM VIBRATIONAL-MODES IN METALORGANIC MOLECULAR-BEAM EPITAXY-GROWN CARBON-DOPED INP - SPECTROSCOPIC SEARCH FOR THE CARBONDONOR, Applied physics letters, 67(5), 1995, pp. 647-649
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
5
Year of publication
1995
Pages
647 - 649
Database
ISI
SICI code
0003-6951(1995)67:5<647:RFVIMM>2.0.ZU;2-V
Abstract
Vibrational modes of carbon doped InP have been investigated by Raman scattering and cluster-Bethe-lattice calculations. In contrast to othe r carbon doped m-V semiconductors, the InP samples grown by metalorgan ic molecular beam epitaxy (MOMBE) show n-type conductivity. Raman spec tra from such samples reveal a vibrational mode at 220 cm(-1). The fre quency of this mode lies in the gap between the acoustic and optical b ranches of the phonon dispersion (gap mode). Cluster-Bethe-lattice cal culations predict such a gap mode only for the carbon donor on the In site and not for the carbon acceptor on the P site. (C) 1995 American Institute of Physics.