GROWTH OF GAN FILMS BY HOT-WALL EPITAXY

GaN films were prepared by hot wall epitaxy on sapphire (0001) substra tes from Ga and NH3 sources. Growth characteristics of the GaN films w ere investigated from reflection high energy electron diffraction (RHE ED) and x-ray diffraction measurements, and effects of initial layers on the film growth are discussed. High quality films with streak RHEED patterns were obtained when the films were grown on a GaN initial lay er prepared by Ga predeposition and its nitridation on surface nitride d sapphire substrates. (C) 1995 American Institute of Physics.