Ef. Schubert et al., PHENOMENOLOGY OF ZN DIFFUSION AND INCORPORATION IN INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY (OMVPE), Applied physics letters, 67(5), 1995, pp. 700-702
The diffusion characteristics and incorporation characteristics of Zn
dopants in OMVPE-grown InP are studied. The Zn diffusion constant depe
nds strongly on concentration and increases by four -3 orders of magni
tude in the Zn concentration range 2x10(18)-8x10(18) cm(-3). This dras
tic concentration dependence of the Zn diffusion constant is shown to
determine the Zn incorporation characteristics during OMVPE growth. A
spread of Zn dopants into intentionally undoped regions may result at
high Zn doping concentrations in InP. (C) 1995 American Institute of P
hysics.