PHENOMENOLOGY OF ZN DIFFUSION AND INCORPORATION IN INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY (OMVPE)

Authors
SCHUBERT EF PINZONE CJ GEVA M
Citation
Ef. Schubert et al., PHENOMENOLOGY OF ZN DIFFUSION AND INCORPORATION IN INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY (OMVPE), Applied physics letters, 67(5), 1995, pp. 700-702
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
5
Year of publication
1995
Pages
700 - 702
Database
ISI
SICI code
0003-6951(1995)67:5<700:POZDAI>2.0.ZU;2-M
Abstract
The diffusion characteristics and incorporation characteristics of Zn dopants in OMVPE-grown InP are studied. The Zn diffusion constant depe nds strongly on concentration and increases by four -3 orders of magni tude in the Zn concentration range 2x10(18)-8x10(18) cm(-3). This dras tic concentration dependence of the Zn diffusion constant is shown to determine the Zn incorporation characteristics during OMVPE growth. A spread of Zn dopants into intentionally undoped regions may result at high Zn doping concentrations in InP. (C) 1995 American Institute of P hysics.