A NEURON-MOS NEURAL-NETWORK USING SELF-LEARNING-COMPATIBLE SYNAPSE CIRCUITS
Citation
T. Shibata et al., A NEURON-MOS NEURAL-NETWORK USING SELF-LEARNING-COMPATIBLE SYNAPSE CIRCUITS, IEEE journal of solid-state circuits, 30(8), 1995, pp. 913-922
Categorie Soggetti
Engineering, Eletrical & Electronic
SICI code
0018-9200(1995)30:8<913:ANNUSS>2.0.ZU;2-U
Abstract
A circuit technology for self-learning neural network hardware has bee
n developed using a high-functionality device called Neuron MOS Transi
stor (nu MOS) as a key circuit element. A nu MOS can perform weighted
summation of multiple input signals and thresholding all at a single t
ransistor level based the charge sharing among multiple capacitors. An
electronic synapse cell has been constructed with six transistors by
merging a floating-gate EEPROM memory cell into a new-concept nu MOS d
ifferential-source-follower circuitry. The synapse can represent both
positive (excitatory) and negative (inhibitory) weights under single V
-DD power supply and is free from standby power dissipation. An excell
ent linearity in the weight updating characteristics of the synapse me
mory has been also established by employing a simple self-feedback reg
ime in each cell circuitry, thus making it fully compatible to the on-
chip self-learning architecture of nu MOS neural networks. The basic o
peration of the synapse cell and a nu MOS neural network using the syn
apse has been experimentally verified using test circuits fabricated b
y a double-polysilicon CMOS process.