CHARACTERIZATION OF SEMIINSULATING POLYSILICON OXYGEN DOPED SILICON THIN-FILMS

Authors
LYNCH S GREEF R STOEMENOS J DARTNELL NJ LLOYD NS KERN P STUCK R CREAN GM
Citation
S. Lynch et al., CHARACTERIZATION OF SEMIINSULATING POLYSILICON OXYGEN DOPED SILICON THIN-FILMS, Materials science and technology, 11(1), 1995, pp. 80-84
Citations number
14
Categorie Soggetti
Metallurgy & Metallurigical Engineering","Material Science
Journal title
Materials science and technology → ACNP
ISSN journal
02670836
Volume
11
Issue
1
Year of publication
1995
Pages
80 - 84
Database
ISI
SICI code
0267-0836(1995)11:1<80:COSPOD>2.0.ZU;2-#
Abstract
The optical properties of low pressure chemical vapour deposited semi- insulating polysilicon oxygen doped silicon (SIPOS) thin films are cha racterised, using both in situ single wavelength (633 nm) ellipsometry with plasma etching and variable angle spectroscopic ellipsometry, as a function of deposition and annealing conditions. Precise optical mo dels for thin film SIPOS are developed Microstructural and chemical an alysis is presented using cross-sectional transmission electron micros copy and secondary ion mass spectrometry. (C) 1995 The Institute of Ma terial.