ANALYSIS OF THE SOURCE INDUCTANCE EFFECT ON THE POWER PERFORMANCE OF HIGH DEVELOPMENT HEMTS IN THE KA-BAND

Authors
GAQUIERE C BONTE B THERON D CROSNIER Y FAVRE J
Citation
C. Gaquiere et al., ANALYSIS OF THE SOURCE INDUCTANCE EFFECT ON THE POWER PERFORMANCE OF HIGH DEVELOPMENT HEMTS IN THE KA-BAND, IEEE microwave and guided wave letters, 5(8), 1995, pp. 243-245
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
5
Issue
8
Year of publication
1995
Pages
243 - 245
Database
ISI
SICI code
1051-8207(1995)5:8<243:AOTSIE>2.0.ZU;2-H
Abstract
This paper provides an analysis of the power performance degradations of interdigitated HEMT's in millimeter wave range as the total gate wi dth increases. It investigates the possibility of optimizing the devic e topologie by combining a limited number of via holes and airbridge s ource connections in order to offer a good cost-performance trade-off.