ION-BACKSCATTERING ANALYSIS OF ELECTRONIC MATERIALS

Different ion-scattering analysis methods, based on the interaction of energetic ion beams with solids, have become frequently employed tool s for analysis of electronic materials during recent decades. The Ruth erford Backscattering Spectrometry (RBS) has unique potential for perf orming the quantitative analysis of the atomic concentrations in solid s, as a function of depth, employing a single measurement without brea king the sample. The computer data analyses of ion-scattering spectra are crucial for modern experimental techniques, in order to take the f ull advantages of the potentials offered using various ions and energi es exceeding the conventional RBS regime. The concepts for numerical c omputer data analysis of ion-scattering spectra, used for developing a new completely working personal computer (PC) program for ion-scatter ing data analysis, have been presented in the first part of this work. In the second part of the present work High-Temperature Superconducto r (HTSC) materials and Josephson junctions were studied using the ion- scattering spectroscopy. The experimental techniques were expanded bey ond the conventional He-4 Rutherford backscattering, using different i ons and energies exceeding the traditional regimes and providing a com prehensive depth-dependent description of the composition and structur e of the HTSC material. The results obtained from these RES studies we re compared to Scanning Electron Microscopy (SEM) and Secondary Ion Ma ss Spectrometry (SIMS) studies. The third part of this work presents t he RES channeling results on the solid phase epitaxy (SPE) of Si1-xGex layers, amorphized by the double-energy Si+ and Get implantation, the double-energy Ge+ and Ge++ implantation or the usual single-energy Ge + implantation. The RES measured amorphous/crystalline (a/c) depth, as well as the crystal quality were analyzed. The RES channeling spectro scopy was used for optimizing the high-dose Ge implantation into (100) Si substrates.