STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANICCHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS

Authors
ZHAO JL GAO Y LIU XY DOU K HUANG SH YU JQ LIANG JC GAO HK
Citation
Jl. Zhao et al., STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANICCHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS, Journal of materials science letters, 14(14), 1995, pp. 1004-1006
Citations number
17
Categorie Soggetti
Material Science
Journal title
Journal of materials science letters → ACNP
ISSN journal
02618028
Volume
14
Issue
14
Year of publication
1995
Pages
1004 - 1006
Database
ISI
SICI code
0261-8028(1995)14:14<1004:SODLIG>2.0.ZU;2-M