RHENIUM AND RHENIUM OXIDE AS BUFFER LAYERS FOR HIGH T-C THIN-FILMS ONMETALLIC SUBSTRATES

Citation
Kl. Jiao et al., RHENIUM AND RHENIUM OXIDE AS BUFFER LAYERS FOR HIGH T-C THIN-FILMS ONMETALLIC SUBSTRATES, Applied superconductivity, 3(1-3), 1995, pp. 55-60
Citations number
10
Categorie Soggetti
Material Science","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
09641807
Volume
3
Issue
1-3
Year of publication
1995
Pages
55 - 60
Database
ISI
SICI code
0964-1807(1995)3:1-3<55:RAROAB>2.0.ZU;2-3
Abstract
High T-c superconductor films on metal wires for high power applicatio ns must show longterm stability. Suitable buffer layers are required t o prevent interaction between the superconductor thin films and the su bstrate, and to improve the long-term stability. A high melting-point metal, rhenium, and its oxide, were sputter deposited on the metallic substrate, Hastelloy. The study showed that rhenium thin films were re sistant to out-diffusion from the Hastelloy substrates. However, it wa s found that they are easily oxidized at high temperature and they are , therefore, not suitable to oxygen rich high T-c superconductors like YBCO. They might work with other types of high T-c superconductors wh ich have a lesser oxygen dependence.