LOW-LOSS CHANNEL WAVE-GUIDES FABRICATED IN FUSED-SILICA BY GERMANIUM ION-IMPLANTATION

Authors
LEECH PW KEMENY PC RIDGWAY MC
Citation
Pw. Leech et al., LOW-LOSS CHANNEL WAVE-GUIDES FABRICATED IN FUSED-SILICA BY GERMANIUM ION-IMPLANTATION, Electronics Letters, 31(15), 1995, pp. 1238-1240
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
15
Year of publication
1995
Pages
1238 - 1240
Database
ISI
SICI code
0013-5194(1995)31:15<1238:LCWFIF>2.0.ZU;2-5
Abstract
The authors report the first low loss channel waveguides (0.10-0.15 dB /cm) Formed in fused silica by the implantation of MeV Ge ions. The lo ss coefficient or was measured as a function of ion dose (8 x 10(13) - 8 X 10(16) ion/cm(2)) and annealing temperature (250 to 600 degrees C ) at 1300nm. The as-implanted waveguides exhibited a minimum value of alpha = 0.9dB/cm at an intermediate range of dose with a reduction to 0.10-0.15dB/cm after annealing at 500 degrees C.