16-PERCENT EXTERNAL QUANTUM EFFICIENCY FROM PLANAR MICROCAVITY LEDS AT 940 NM BY PRECISE MATCHING OF CAVITY WAVELENGTH

Citation
J. Blondelle et al., 16-PERCENT EXTERNAL QUANTUM EFFICIENCY FROM PLANAR MICROCAVITY LEDS AT 940 NM BY PRECISE MATCHING OF CAVITY WAVELENGTH, Electronics Letters, 31(15), 1995, pp. 1286-1288
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
31
Issue
15
Year of publication
1995
Pages
1286 - 1288
Database
ISI
SICI code
0013-5194(1995)31:15<1286:1EQEFP>2.0.ZU;2-P
Abstract
High efficiency substrate emitting microcavity InGaAs/(Al)GaAs 3 QW LE Ds are reported. The use of regrowth for cavity resonance tuning and i ts effect on device performance, are demonstrated. The best results ob tained include external quantum efficiencies of 16%. At 5mA, 1mW optic al power is delivered with an intensity of 280 mu W/sr.