N-DOPED AND P-DOPED POLYDITHIENO[3,4-B-3',4'-D] THIOPHENE - A NARROW-BAND GAP POLYMER FOR REDOX SUPERCAPACITORS

Citation
C. Arbizzani et al., N-DOPED AND P-DOPED POLYDITHIENO[3,4-B-3',4'-D] THIOPHENE - A NARROW-BAND GAP POLYMER FOR REDOX SUPERCAPACITORS, Electrochimica acta, 40(12), 1995, pp. 1871-1876
Citations number
31
Categorie Soggetti
Electrochemistry
Journal title
ISSN journal
00134686
Volume
40
Issue
12
Year of publication
1995
Pages
1871 - 1876
Database
ISI
SICI code
0013-4686(1995)40:12<1871:NAPPT->2.0.ZU;2-I
Abstract
We studied polydithieno[3,4-b: 3',4'-d]thiophene (pDTT), an electronic ally conducting polymer with a narrow band gap, and our data clearly d emonstrated that the charge injection of both signs is possible in ele ctrolytic media with tetraalkylammonium salts. This is an important fe ature for the development of polymer-based redox supercapacitors with high charge storage capacity and high operating potential. Electrochem ical characterization data of p- and n-doped pDTT films electrosynthes ized in different conditions and on several electrode materials are re ported. Successful results were achieved on carbon paper electrodes wh ere the same p- and n-doping levels were reached.