THE T-P PHASE-DIAGRAMS OF AMORPHOUS GASB, INSB AND INAS

A thermodynamic two-level model is developed and applied for descripti on of metastable phase equilibria in amorphous GaSb, InSb and InAs all oys. The metastable T-P phase diagrams are calculated for these alloys , which include the lines of the semiconductor-to-metal transitions as well as the boundaries of complete thermodynamic instability of the s emiconducting or metallic phases. The calculated phase transitions are of first-order, and the transition lines terminate at critical points which are in the region of negative pressures. It is shown that a ten dency to spontaneous amorphization of a metastable crystalline high-pr essure phase produced by quenching under pressure, the amorphization p arameters and a semiconductor-to-metal transition in the amorphous sta te are conditioned by the interrelation between the positions of the l ines in the actual equilibrium (stable) and calculated metastable phas e diagrams.