ELECTRIC AND PHOTOELECTRIC PROPERTIES OF HIGH-POROSITY SILICON

The basic problems of porous silicon (PS) transport, like long time co nstants, ageing, and the influence of contacts are discussed. The resu lts of the steady-state and transient photoconductivity on the self-su pporting p- and n-type PS are presented and the resulting conclusions, related to the microstructure isotropy, trapping, and time-dependent electric field redistribution are summarized. On the basis of the dark I-U characteristics and their temperature dependencies the different volume and surface transport mechanisms are discussed. The compatibili ty of the models of explanation of the strong PS photoluminescence wit h our transport results is discussed.