Vm. Dubin et al., PREPARATION AND CHARACTERIZATION OF SURFACE-MODIFIED LUMINESCENT POROUS SILICON, Physica status solidi. b, Basic research, 190(1), 1995, pp. 47-52
Porous silicon layers are chemically grafted with trimethylsiloxy grou
ps by exposure to hexamethyldisilazane (HMDS) vapors. After treatment,
infrared spectroscopy reveals that part of the initially hydrogenated
surface is actually modified. Luminescence of the porous layers appea
rs to be little affected by the treatment. On strongly luminescent sam
ples. the photocarriers exhibit the same infrared absorption as in hyd
rogenated or oxidized porous silicon, evidencing the similar involveme
nt of localized states in the luminescence process. The treated porous
silicon layers also exhibit an increased stability against aging in a
mbient, as compared to hydrogenated porous silicon. Furthermore, the m
odification can be removed by simple exposure to HF vapor, thereby res
toring the initial hydrogenated surface.