SATURATION AND VOLTAGE QUENCHING OF THE POROUS SILICON LUMINESCENCE AND IMPORTANCE OF THE AUGER EFFECT

Authors
ROMESTAIN R VIAL JC MIHALCESCU I BSIESY A
Citation
R. Romestain et al., SATURATION AND VOLTAGE QUENCHING OF THE POROUS SILICON LUMINESCENCE AND IMPORTANCE OF THE AUGER EFFECT, Physica status solidi. b, Basic research, 190(1), 1995, pp. 77-84
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
190
Issue
1
Year of publication
1995
Pages
77 - 84
Database
ISI
SICI code
0370-1972(1995)190:1<77:SAVQOT>2.0.ZU;2-7
Abstract
Two important observations for porous silicon, the saturation and the voltage selective quenching of the photoluminescence, are presented. T heir similarities are pointed out and discussed in two phenomenologica l models, the saturation of the absorption and an Auger effect. The co nsequences of carrier accumulation in quantum crystallites are emphasi zed in both cases.