R. Romestain et al., SATURATION AND VOLTAGE QUENCHING OF THE POROUS SILICON LUMINESCENCE AND IMPORTANCE OF THE AUGER EFFECT, Physica status solidi. b, Basic research, 190(1), 1995, pp. 77-84
Two important observations for porous silicon, the saturation and the
voltage selective quenching of the photoluminescence, are presented. T
heir similarities are pointed out and discussed in two phenomenologica
l models, the saturation of the absorption and an Auger effect. The co
nsequences of carrier accumulation in quantum crystallites are emphasi
zed in both cases.