LIGHT-EMISSION FROM SILICON NANOSTRUCTURES PRODUCED BY CONVENTIONAL LITHOGRAPHIC AND REACTIVE ION ETCHING TECHNIQUES

Sub-ten nanometer diameter silicon pillars and silicon walls of the sa me thickness are Fabricated by using conventional optical lithography based on deep-UV exposure and reactive ion etching using fluorine only containing gases. The produced structures are studied for their lumin escence properties. Visible photoluminescence with a peak in the range 580 to 650 nm is observed under Ar laser irradiation.