ANODIZED AMORPHOUS-SILICON - PRESENT STATUS

The results of the few groups which have attempted to etch chemically or electrochemically amorphous silicon films prepared in various ways are reviewed briefly with a focus on the photoluminescence of such lay ers. The particular case of plasma-deposited boron-doped hydrogenated amorphous silicon subjected to an anodization in HF solutions followed by an electro-oxidation in water is elucidated. Many similarities bet ween the properties of these materials and those of their crystalline counterparts are emphasized, but one significant difference between th e resonantly excited PL spectra of the two porous materials is pointed out.