CONDUCTION-BAND EDGE CHARGE-DENSITIES IN INXGA1-XSB

The empirical pseudopotential method coupled with the virtual crystal approximation which incorporates compositional disorder as an effectiv e potential is used to compute the electronic conduction band edge cha rge densities at the Gamma and X points for the ternary alloy InxGa1-x Sb. It is found that these charge densities are strongly dependent upo n the stochiometric coefficient x. Such differences are crucial for a comprehensive understanding of interstitial impurities and the respons e of specific band states to perturbation in ternary alloy semiconduct ors.