ACTIVATION-ENERGY FOR PT2SI AND PTSI FORMATION MEASURED OVER A WIDE-RANGE OF RAMP RATES

The activation energies, E(a)'s, for Pt2Si and PtSi formation were det ermined using in situ resistance measurements with ramp rates ranging from 0.4 degrees C/m to 100 degrees C/s. Measurements were performed u sing both conventional furnace and rapid thermal annealing (RTA), Pt f ilms were evaporated on undoped polycrystalline Si and single-crystal Si on sapphire substrates. The E(a)'s determined from Kissinger plots were 1.63 +/- 0.05 and 1.61 +/- 0.06 eV for Pt2Si formation and 1.83 /- 0.06 and 1.83 +/- 0.07 eV for PtSi formation with polycrystalline S i and silicon on sapphire substrates, respectively. These are the firs t reported measurements of E(a)'s for Pt2Si and PtSi formation over su ch a wide range of heating rates (greater than four orders of magnitud e) and at such high heating rates. The phase formation sequence remain ed the same for the range of heating rates examined.