METAL INCORPORATION IN SPUTTER-DEPOSITED MOS2 FILMS STUDIED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE

Citation
Jr. Lince et al., METAL INCORPORATION IN SPUTTER-DEPOSITED MOS2 FILMS STUDIED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE, Journal of materials research, 10(8), 1995, pp. 2091-2105
Citations number
32
Categorie Soggetti
Material Science
ISSN journal
08842914
Volume
10
Issue
8
Year of publication
1995
Pages
2091 - 2105
Database
ISI
SICI code
0884-2914(1995)10:8<2091:MIISMF>2.0.ZU;2-7
Abstract
Solid lubricant films produced by cosputtering metals with MoS2 and by forming metal/MoS2 multilayers are being planned for use in the next generation of solid lubricated devices on spacecraft, including gimbal and sensor bearings, actuators, and sliding electrical contacts. The films exhibit increased densities and wear lives compared to films wit hout additives, but the mechanism of density enhancement is not well u nderstood. The extended x-ray absorption fine structure (EXAFS) techni que is ideal for elucidating the structure of these poorly crystalline films. We analyzed MoS2 films cosputtered with 0, 2, and 10% Ni, as w ell as Ni/MoS2 and Au(Pd)/MoS2 multilayer films. The results obtained at the Mo-K absorption edge showed that the metal-containing films com prised predominantly the same nanocrystalline phases present in simila r films without added metals: pure MoS2 and a MoS2-xOx phase. MoS2-xOx is isostructural with MoS2, with O atoms substituting for S atoms in the MoS2 crystal lattice. For all Ni-containing films, EXAFS data obta ined at the Ni-K absorption edge showed that the Ni had not chemically reacted with the MoS2-xOx and MoS2, but formed a disordered NiOx phas e. However, Ni-cosputtered films showed decreasing Mo-Mo bond lengths in the MoS2-xOx phase with increasing Ni content, probably due to pref erential oxidation of Ni compared to MoS2. EXAFS of these Ni-cosputter ed films showed only a small decrease in short-range order with Ni con tent, while x-ray diffraction showed a concurrent large decrease in lo ng-range order. The results indicate that film densification in Ni-cos puttered films is caused by NiOx formation at the edges of nucleating MoS2-xOx/MoS2 crystallites, limiting the crystallite size attainable w ithin the films.