TUNABLE UV GENERATION AT 286 NM BY FREQUENCY TRIPLING OF A HIGH-POWERMODE-LOCKED SEMICONDUCTOR-LASER

Citation
L. Goldberg et Dav. Kliner, TUNABLE UV GENERATION AT 286 NM BY FREQUENCY TRIPLING OF A HIGH-POWERMODE-LOCKED SEMICONDUCTOR-LASER, Optics letters, 20(15), 1995, pp. 1640-1642
Citations number
26
Categorie Soggetti
Optics
Journal title
ISSN journal
01469592
Volume
20
Issue
15
Year of publication
1995
Pages
1640 - 1642
Database
ISI
SICI code
0146-9592(1995)20:15<1640:TUGA2N>2.0.ZU;2-G
Abstract
We produced ultraviolet radiation by frequency tripling the mode-locke d emission of an external cavity laser containing a tapered GaAlAs amp lifier gain element. The 429-nm second harmonic produced by a KNbO3 cr ystal was sum-frequency mixed with the 858-nm fundamental in a Li3BO5 crystal, generating as much as 50 mu W of power at 286 nm. (C) 1995 Op tical Society of America.