ELECTRIC-FIELD-INDUCED PHOTOLUMINESCENCE QUENCHING IN THIN-FILM LIGHT-EMITTING-DIODES BASED ON POLY(PHENYL-P-PHENYLENE VINYLENE)

Citation
M. Deussen et al., ELECTRIC-FIELD-INDUCED PHOTOLUMINESCENCE QUENCHING IN THIN-FILM LIGHT-EMITTING-DIODES BASED ON POLY(PHENYL-P-PHENYLENE VINYLENE), Synthetic metals, 73(2), 1995, pp. 123-129
Citations number
28
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Metallurigical Engineering
Journal title
ISSN journal
03796779
Volume
73
Issue
2
Year of publication
1995
Pages
123 - 129
Database
ISI
SICI code
0379-6779(1995)73:2<123:EPQITL>2.0.ZU;2-P
Abstract
We report on electric field-induced fluorescence quenching in thin-fil m light-emitting diode (LED) structures made from blends of poly(pheny l-p-phenylene vinylene) and polycarbonate. The dependence of fluoresce nce quenching on excitation wavelength, electric field and concentrati on has been measured. Efficient fluorescence quenching is observed, wh ich is attributed to field-induced dissociation of excitons. The same effect is expected to be operative in LED devices limiting electrolumi nescence quantum yield. An estimate of the exciton binding energy of E (B) approximate to 0.4 eV in this class of system is inferred from the field dependence by comparison with model calculations.