DEVELOPMENT OF ALXGA1-XN ALLOY SEMICONDUCTORS FOR SOLAR-BLIND ULTRAVIOLET SEEKER APPLICATIONS

Citation
Dk. Wickenden et al., DEVELOPMENT OF ALXGA1-XN ALLOY SEMICONDUCTORS FOR SOLAR-BLIND ULTRAVIOLET SEEKER APPLICATIONS, Johns Hopkins APL technical digest, 16(3), 1995, pp. 246-257
Citations number
NO
Categorie Soggetti
Physics, Applied","Multidisciplinary Sciences
ISSN journal
02705214
Volume
16
Issue
3
Year of publication
1995
Pages
246 - 257
Database
ISI
SICI code
0270-5214(1995)16:3<246:DOAASF>2.0.ZU;2-5
Abstract
Current seeker systems for tracking intercontinental or theater ballis tic missiles generally use the thermally generated infrared signatures of the missiles' exhaust plumes as their targets. This detection meth od requires extensive filtering to remove high-intensity Earth and sky backgrounds and, in airborne systems, active cooling of window materi als. A considerable advantage would be obtained if the chemically gene rated ultraviolet signature were used as the target. The Applied Physi cs Laboratory is conducting research to design wide-bandgap GaN and Al xGa1-xN semiconductor photodetectors to meet such applications and to develop a prototype seeker system.