PHASE-TRANSITIONS IN III-V COMPOUNDS TO MEGABAR PRESSURES

The high pressure behavior of 16 III-V semiconductors, including the n itride, phosphide, arsenide, and antimonide, respectively, of boron, a luminum, gallium and indium, is discussed in a summary of recent resea rch efforts. The emphasis is laid on the structural phase transitions at high pressures utilizing X-ray diffraction technique. The equation of state (EOS) and, hence, the bulk modulus and its pressure derivativ e at 0 pressure of these compounds is also summarized. Theoretical res ults are compared with experimental data wherever appropriate to show an ever-increasing reliability of theoretical predictions. Optical abs orption, reflectivity, and Raman measurements of these compounds are b riefly mentioned. Two closely related IVB elements, Si and Ge, are als o discussed.