A method to protect clean and ordered InAlSb/InSb(100) surfaces from a
tmospheric exposure by the deposition of an amorphous Sb layer is disc
ussed. This layer may be subsequently removed by heat treatment at 490
degrees C to generate a c(8 X 2) reconstructed surface that is predom
inantly In-rich and to a lesser extent Al-rich, with respect to the bu
lk stoichiometry.