ANTIMONY CAPPING AND DECAPPING OF INALSB(100)

Citation
Sa. Clark et al., ANTIMONY CAPPING AND DECAPPING OF INALSB(100), Surface science, 336(1-2), 1995, pp. 193-198
Citations number
12
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
336
Issue
1-2
Year of publication
1995
Pages
193 - 198
Database
ISI
SICI code
0039-6028(1995)336:1-2<193:ACADOI>2.0.ZU;2-A
Abstract
A method to protect clean and ordered InAlSb/InSb(100) surfaces from a tmospheric exposure by the deposition of an amorphous Sb layer is disc ussed. This layer may be subsequently removed by heat treatment at 490 degrees C to generate a c(8 X 2) reconstructed surface that is predom inantly In-rich and to a lesser extent Al-rich, with respect to the bu lk stoichiometry.