The subgap optical absorption of GaAs layers grown by low temperature
molecular beam epitaxy is measured by photothermal deflection spectros
copy (PDS). The absorption increases as the growth temperature decreas
es at a fixed wavelength. Defect densities evaluated from the absorpti
on spectra and the known absorption cross sections are between 10(18)
and 10(19) cm(-3). It is shown that complementary PDS phase spectra ca
n be used to separate the absorption of the epitaxial layers from the
bulk. (C) 1995 American Institute of Physics.