C. Aktik et S. Belkouch, A SIMPLE VELOCITY MODEL FOR LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 67(6), 1995, pp. 869-871
A new simple transport model is used to describe the dependence of the
electrical characteristics of the epitaxial layer on the growth param
eters in low-pressure metalorganic chemical vapor deposition. The impo
rtant parameters of this model are the mean velocity of the gases and
the [V]/[III] ratio. Undoped GaAs epitaxial layers are prepared at var
ious operating pressures. A semi-empirical correlation relating the re
actor pressure and flow rate is established that dictates the operatin
g conditions for a single set of film properties. This enables growth
of a material with constant characteristics while pressure can be vari
ed. (C) 1995 American Institute of Physics.