A SIMPLE VELOCITY MODEL FOR LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

A new simple transport model is used to describe the dependence of the electrical characteristics of the epitaxial layer on the growth param eters in low-pressure metalorganic chemical vapor deposition. The impo rtant parameters of this model are the mean velocity of the gases and the [V]/[III] ratio. Undoped GaAs epitaxial layers are prepared at var ious operating pressures. A semi-empirical correlation relating the re actor pressure and flow rate is established that dictates the operatin g conditions for a single set of film properties. This enables growth of a material with constant characteristics while pressure can be vari ed. (C) 1995 American Institute of Physics.