A NOVEL METHOD FOR DETERMINING THE STRENGTH OF PECVD SILICON (OXY)NITRIDE FILMS

Authors
OGBUJI LUJT HARDING DR
Citation
Lujt. Ogbuji et Dr. Harding, A NOVEL METHOD FOR DETERMINING THE STRENGTH OF PECVD SILICON (OXY)NITRIDE FILMS, Thin solid films, 263(2), 1995, pp. 194-197
Citations number
7
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
263
Issue
2
Year of publication
1995
Pages
194 - 197
Database
ISI
SICI code
0040-6090(1995)263:2<194:ANMFDT>2.0.ZU;2-Q
Abstract
A technique is described for determining the strength of plasma-enhanc ed chemical vapor-deposited (PECVD) thin films from the bursting size of microscopic bubbles formed by escaping volatiles upon annealing. Th e strength of a PECVD SiOxNy (silicon oxynitride) film is estimated us ing this approach.