IDENTIFICATION OF SI SIO2 INTERFACE PROPERTIES IN THIN-FILM TRANSISTORS WITH CHARGE-PUMPING TECHNIQUE/

Frequency- and voltage-dependent charge pumping characteristics of thi n film transistors (TFTs) are discussed. Methods for identifying inter face trap and oxide charge parameters based on these characteristics a re presented. Correlation between defect densities as obtained from th e charge pumping and current-voltage (I-V) characteristics is investig ated before and after hydrogen annealing used to control trap paramete rs in TFTs. Compared to the charge pumping technique, the I-V method w as found to be less sensitive to the variations of Si/SiO2 interface p roperties.