CAPTURE OF CARRIERS IN QUANTUM-WELLS AND THERMAL EMISSION OF CARRIERSIN III-V SEMICONDUCTORS

Authors
SOLOVEV SA YASSIEVICH IN CHISTYAKOV VM
Citation
Sa. Solovev et al., CAPTURE OF CARRIERS IN QUANTUM-WELLS AND THERMAL EMISSION OF CARRIERSIN III-V SEMICONDUCTORS, Semiconductors, 29(7), 1995, pp. 654-660
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
7
Year of publication
1995
Pages
654 - 660
Database
ISI
SICI code
1063-7826(1995)29:7<654:COCIQA>2.0.ZU;2-#
Abstract
A study is made of the capture and emission of nonequilibrium charge c arriers in semiconductor quantum-well structures in which the energy r elaxation is determined by an emission of longitudinal optical phonons . The rates of electron and hole capture by quantum wells are calculat ed numerically. The effective carrier lifetime in the barrier layer is analyzed for heterostructures in the Al0.3Ga0.7As/GaAs system. (C) 19 95 American Institute of Physics.