Sa. Solovev et al., CAPTURE OF CARRIERS IN QUANTUM-WELLS AND THERMAL EMISSION OF CARRIERSIN III-V SEMICONDUCTORS, Semiconductors, 29(7), 1995, pp. 654-660
A study is made of the capture and emission of nonequilibrium charge c
arriers in semiconductor quantum-well structures in which the energy r
elaxation is determined by an emission of longitudinal optical phonons
. The rates of electron and hole capture by quantum wells are calculat
ed numerically. The effective carrier lifetime in the barrier layer is
analyzed for heterostructures in the Al0.3Ga0.7As/GaAs system. (C) 19
95 American Institute of Physics.