VISIBLE AND IR ELECTROLUMINESCENCE OF POROUS SILICON

Electroluminescence of porous silicon on n-Si substrates in contact wi th oxidizing electrolytes has been studied. In addition to a known emi ssion band in the visible part of the spectrum, three bands are found in the IR region, peaking at 0.85, 1.05, and 1.15 eV. The observed spe ctrum may be a combination of two spectra, associated with the existen ce of nanometer-scale and macroscopic crystals in the porous silicon. Each of these spectra in turn consists of two bands, which correspond to carrier recombination through levels near band edges and to band-(d eep D+ level) recombination. (C) 1995 American Institute of Physics.