DEGRADATION OF THE PHOTOLUMINESCENCE OF POROUS SILICON CAUSED BY CO-60 GAMMA-RADIATION

Two series of experiments were carried out. In the first, as-grown por ous silicon was bombarded with Co-60 gamma radiation to a dose similar to 10(20) cm(-2). The photoluminescence intensity fell off by a facto r similar to 50 as a result, although the peak of the band underwent e ssentially no shift. In the second series, single-crystal silicon was bombarded to the same dose, and then porous silicon was fabricated on it. The intensity and spectra of these samples were the same as usual. Possible degradation mechanisms are discussed. (C) 1995 American Inst itute of Physics.