ELECTROPHOTOGRAPHIC DEEP-LEVEL SPECTROSCOPY OF AS2SE3 AND AS2S3

Parameters of the energy distribution of localized states, N(E), in fi lms of arsenic sulfide and selenide have been measured by electrophoto graphic deep-level spectroscopy. The experimental charging conditions - the cycling period, the charging voltage, and the temperature interv al - have been optimized. Distributions N(E) characterized by asymmetr ic peaks at 0.85-0.87 eV and 0.98-1.0 eV for As2Se3 and As2S3, respect ively, have been found in the approximation of a quasicontinuous and o therwise arbitrary distribution. The temperature dependence of the pro duct of the drift mobility and lifetime, mu tau, has been used to dete rmine distributions N(E) which have maxima at 0.6 and 0.75 eV for arse nic selenide and sulfide, respectively. (C) 1995 American Institute of Physics.