DEEP CENTERS IN INXGA1-XAS INP PHOTODIODES FABRICATED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/

Deep centers in epitaxial layers of In0.53Ga(0.47)As grown by metal-or ganic chemical vapor depostion have been studied by DLTS. Trapping cen ters of three types for majority carriers (electrons), with energies E (c) - 0.12, E(c) - 0.30, and E(c) - 0.38 eV, were observed in the spac e-charge region of InxGa1-xAs/InP p-i-n photodiodes fabricated from th ese layers. The last two of these trapping centers are centers of nonr adiative recombination. The relationship between the reverse current o f the photodiodes and the presence of one of these centers in the spac e-charge region is discussed. (C) 1995 American Institute of Physics.