NORMAL INCIDENCE PHOTORESPONSE IN GAAS ALGAAS QUANTUM-WELL INFRARED PHOTODETECTOR/

Authors
YUAN ZY CHEN ZH CUI DF MA JW HU QA ZHOU JM ZHOU YL
Citation
Zy. Yuan et al., NORMAL INCIDENCE PHOTORESPONSE IN GAAS ALGAAS QUANTUM-WELL INFRARED PHOTODETECTOR/, Applied physics letters, 67(7), 1995, pp. 930-931
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
7
Year of publication
1995
Pages
930 - 931
Database
ISI
SICI code
0003-6951(1995)67:7<930:NIPIGA>2.0.ZU;2-5
Abstract
A normal incidence quantum well infrared photodetector consisting of a symmetric GaAs/AlGaAs quantum wells has been demonstrated. The detecto r uses electron intersubband transitions between bound to extended sta tes in the step quantum well. The infrared photocurrent spectrum chara cterized using a glowbar monochromator source shows a photovoltaic res ponse in the configuration of normal incidence. The peak wavelength is 10.3 mu m and a detectivity D-lambda=3.7X10(8) cm root Hz/W was achi eved at T=80 K. (C) 1995 American Institute of Physics.