TUNABLE WAVELENGTH HOT-ELECTRON LIGHT EMITTER

We demonstrate the operation of a surface emitting light emitting diod e. The wavelength of the emitted light can be tuned with the applied v oltage. The device is based on a p-GaAs and n-Ga1-xAlxAs heterojunctio n containing an inversion layer in the p side and, GaAs quantum wells in the n side, and, is referred to as HELLISH-II (hot electron light e mitting and lasing in semiconductor heterojunction). The device utiliz es hot electron longitudinal transport and, therefore, light emission is independent of the polarity of the applied voltage. (C) 1995 Americ an Institute of Physics.