INFLUENCE OF OXYGEN ON THE FORMATION OF EPITAXIAL ERBIUM SILICIDE FILM ON [111]SI

Epitaxial ErSi2-x thin films have been grown by the reactive depositio n epitaxy technique on [111]Si substrate at a pressure of similar to 1 0(-8) Torr in a controlled atmosphere. A close relation between the O partial pressure during deposition and the crystalline quality of the silicide film has been observed and good quality epitaxial ErSi2-x lay ers have been obtained if O is incorporated in the silicide layer at a concentration of similar to 7 at. %. (C) 1995 American Institute of P hysics.