EFFECT OF RESIDUAL ION DAMAGE ON THE MINORITY-CARRIER LIFETIME IN MOLECULAR-BEAM EPITAXY-GROWN SILICON DOPED BY LOW-ENERGY ION-IMPLANTATION

The residual ion damage due to low-energy ion implantation during mole cular beam epitaxy growth was investigated by measuring the minority c arrier lifetime in the base of a silicon bipolar transistor. The base was doped with As+ ions at 200 eV to a concentration of 10(19) cm(-3). Three samples were grown at temperatures of 500, 650, and 800 degrees C. The 500 degrees C sample had a minority carrier lifetime in the ba se similar to 1/6 that of the samples grown at the higher temperatures . On annealing at 650 degrees C the lifetimes of all samples were esse ntially equal. The results indicate that at this dopant concentration the collision cascades caused by ion bombardment do not overlap. (C) 1 995 American Institute of Physics.