NATURE OF DEFECT CENTERS IN B-DOPED AND P-DOPED SIO2 THIN-FILMS

An electron paramagnetic resonance study has been carried out on B- an d P-doped oxide films on Si. The principal defects are the boron-oxyge n-hole-center (BOHC) and phosphorus-oxygen-hole-center (POHC), which a re unpaired electrons on oxygen atoms with B or P in the near vicinity . Our results demonstrate that the centers are activated by hole captu re. We find that holes are trapped very efficiently in both B- and P-d oped dielectrics; however, electrons are more efficiently trapped in t he B-doped dielectrics. We find that the electrical data can be explai ned by assuming that the precursor to the BOHC is negatively charged a nd the precursor to the POHC is electrically neutral. (C) 1995 America n Institute of Physics.