Lf. Castro et al., SUPERCONDUCTING, SURFACE AND INTERFACE PROPERTIES OF HO(123) AND BI(2212) FILMS ON SAPPHIRE WITH CERIUM OXIDE BUFFER LAYERS, Solid state communications, 95(12), 1995, pp. 829-831
We report on the X-ray diffraction, secondary ion mass spectrometry, a
nd atomic force microscopy on Ho(123) and Bi(2212) films de sputtered
in pure oxygen atmosphere onto heated sapphire substrates with CeO2 bu
ffer layers. The films were c-axis oriented. The Ho(123) films had a T
-c of 88 K but had a relatively high room temperature resistivity of 4
00 mu Omega cm. The Bi(2212) films showed a broad transition and a low
T-c of 46 K. The data may be explained by a certain amount of Al diff
usion and inhomogenous grain growth.