SUPERCONDUCTING, SURFACE AND INTERFACE PROPERTIES OF HO(123) AND BI(2212) FILMS ON SAPPHIRE WITH CERIUM OXIDE BUFFER LAYERS

Citation
Lf. Castro et al., SUPERCONDUCTING, SURFACE AND INTERFACE PROPERTIES OF HO(123) AND BI(2212) FILMS ON SAPPHIRE WITH CERIUM OXIDE BUFFER LAYERS, Solid state communications, 95(12), 1995, pp. 829-831
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
95
Issue
12
Year of publication
1995
Pages
829 - 831
Database
ISI
SICI code
0038-1098(1995)95:12<829:SSAIPO>2.0.ZU;2-F
Abstract
We report on the X-ray diffraction, secondary ion mass spectrometry, a nd atomic force microscopy on Ho(123) and Bi(2212) films de sputtered in pure oxygen atmosphere onto heated sapphire substrates with CeO2 bu ffer layers. The films were c-axis oriented. The Ho(123) films had a T -c of 88 K but had a relatively high room temperature resistivity of 4 00 mu Omega cm. The Bi(2212) films showed a broad transition and a low T-c of 46 K. The data may be explained by a certain amount of Al diff usion and inhomogenous grain growth.