HETEROEPITAXIAL GROWTH OF INAS ON GSAS(100) MEDIATED BY TE AT THE INTERFACE

Authors
RODRIGUES WN ETGENS VH SAUVAGESIMKIN M ROSSI G SIROTTI F PINCHAUX R ROCHET F
Citation
Wn. Rodrigues et al., HETEROEPITAXIAL GROWTH OF INAS ON GSAS(100) MEDIATED BY TE AT THE INTERFACE, Solid state communications, 95(12), 1995, pp. 873-877
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
95
Issue
12
Year of publication
1995
Pages
873 - 877
Database
ISI
SICI code
0038-1098(1995)95:12<873:HGOIOG>2.0.ZU;2-R
Abstract
The heteroepitaxy of InAs on a Te covered GaAs surface is investigated by photoelectron spectroscopy. Core-level spectra probed with synchro tron radiation show that Te remains at the interface between InAs and GaAs in a concentration much higher than the solubility limit of this element in III-V compounds, suggesting that a new compound is being fo rmed. We propose that this interlayer is responsible for the observed changing in the growth mode of the InAs overlayer from islands to laye r by layer.