EXTRACTION TECHNIQUES FOR FET SWITCH MODELING

A new simple method for extracting equivalent circuit parameters for s eries and shunt GaAs FET switches is presented, The circuit elements a re extracted from one set of S-parameter measurements for each switch state, acid scale linearly with gate width, Extracted Equivalent Circu it Parameters (ECP's) are insensitive to frequency across the measured bandwidth. Good agreement has been obtained between simulated and mod el results for a 0.5 mu m gate length series and shunt GaAs FET switch es of varying gate widths, across the 0.45-26.5 GHz band.