STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF PVD-DEPOSITED SNO2 FILMS FOR GAS-SENSOR APPLICATION

Citation
Hj. Michel et al., STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF PVD-DEPOSITED SNO2 FILMS FOR GAS-SENSOR APPLICATION, Sensors and actuators. B, Chemical, 25(1-3), 1995, pp. 568-572
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09254005
Volume
25
Issue
1-3
Year of publication
1995
Pages
568 - 572
Database
ISI
SICI code
0925-4005(1995)25:1-3<568:SAECOP>2.0.ZU;2-Z
Abstract
Thin SnO2 films for H-2-gas-sensor application have been prepared by r .f. magnetron sputtering. The temperature-dependent electrical conduct ivity is measured in humid synthetic air without and with hydrogen. A model for the electrical conductivity has been developed, which consis ts of two parts, one of them a simple exponential function. We suggest this is caused by a strongly doped interdiffusion layer. An influence of three different glass substrates has been observed. The subtractio n of the interface conductance leads to an H-2 sensitivity that depend s less on the sensor temperature.