ROLE AND MECHANISM OF THE FORMATION OF HYDROGEN-INDUCED INTERFACE STATES FOR PLATINUM SILICON-OXIDE SILICON MOS TUNNELING DIODES

The mechanism of hydrogen sensing by Pt/silicon oxide/Si MOS tunnellin g diodes has been investigated by measurements of current-voltage (I-V ) and conductance-voltage (G-V) curves and their time dependence after the introduction of hydrogen. Interface states are formed by the reac tion of the silicon oxide/Si interface with protons. The time constant for the formation of the interface states increases with the hydrogen concentration, which is explained by the formation of a two-dimension al aggregation of interface states. The current flowing via the interf ace states is predominant at a forward-bias voltage of 0.5 V and becom es less predominant in the higher bias region.