II-VI heterostructures composed of ZnMgSSe/ZnSe/ZnCdSe layers have bee
n grown by molecular beam epitaxy on conducting ZnSe substrates and fa
bricated into blue and green laser diodes. These are the first laser d
iodes ever prepared on ZnSe. Pulsed laser emission from devices with n
o facet coatings has been obtained from 77K to near room temperature.
CW laser emission was also observed al 77K.