MBE GROWN STRAIN-COMPENSATED ALGAINAS ALGAINAS/INP MQW LASER STRUCTURES/

Authors
HILLMER H LOSCH R STEINHAGEN F SCHLAPP W POCKER A BURKHARD H
Citation
H. Hillmer et al., MBE GROWN STRAIN-COMPENSATED ALGAINAS ALGAINAS/INP MQW LASER STRUCTURES/, Electronics Letters, 31(16), 1995, pp. 1346-1348
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
16
Year of publication
1995
Pages
1346 - 1348
Database
ISI
SICI code
0013-5194(1995)31:16<1346:MGSAAM>2.0.ZU;2-U
Abstract
Strain-compensated MQW structures with AlInGaAs barriers and up to 15 AlInGaAs wells were frown by molecular beam epitaxy (MBE) and characte rised by photoluminescence and X-ray diffraction. Our structures show very low threshold currents of 4 mA and high AM modulation bandwidths of 21 GHz.