DARK CURRENTS IN PIN PHOTODETECTORS FABRICATED BY PREPROCESSING AND POSTPROCESSING TECHNIQUES OF EPITAXIAL LIFTOFF

Authors
JUSTICE J CORBETT B WALSH S CONSIDINE L KELLY WM
Citation
J. Justice et al., DARK CURRENTS IN PIN PHOTODETECTORS FABRICATED BY PREPROCESSING AND POSTPROCESSING TECHNIQUES OF EPITAXIAL LIFTOFF, Electronics Letters, 31(16), 1995, pp. 1382-1383
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
16
Year of publication
1995
Pages
1382 - 1383
Database
ISI
SICI code
0013-5194(1995)31:16<1382:DCIPPF>2.0.ZU;2-E
Abstract
A comparison is made between the dark currents in mesa isolated InGaAs pin photodetectors. The detectors are Fabricated in three ways: on a substrate, by transfer of fabricated photodetectors onto a silicon sub strate. and by fabrication of devices on posttransferred material. A 4 x 10 array of functioning devices is described.