EPITAXIAL LIFTOFF INGAAS INP MSM PHOTODETECTORS ON SI/

Authors
HERRSCHER M GRUNDMANN M DROGE E KOLLAKOWSKI S BOTTCHER EH BIMBERG D
Citation
M. Herrscher et al., EPITAXIAL LIFTOFF INGAAS INP MSM PHOTODETECTORS ON SI/, Electronics Letters, 31(16), 1995, pp. 1383-1384
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
16
Year of publication
1995
Pages
1383 - 1384
Database
ISI
SICI code
0013-5194(1995)31:16<1383:ELIIMP>2.0.ZU;2-G
Abstract
InGaAs:Fe/InP:Fe metal-semiconductor-metal (MSM) photo-detectors for t he long wavelength region were transferred by epitaxial liftoff (ELO) techniques onto an Si substrate. The transferred detectors, with a fin ger spacing and width of 1.5 and 1.0 mu m, respectively, showed no det erioration in device performance. A fast impulse response with an FWHM of 23 ps and an external quantum efficiency of 48% was measured at a 7V bias and 1.3 mu m wavelength. The leakage current was 250nA at a 7V bias.